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SO-DDR3 Memory

Deliver stable memory technology with Advantech! We offers industrial grade SO-DDR3 1600 memory with 30μ" gold plating connector (204 pin) which is featuring its increased power efficiency and bandwidth. With rigorous reliability and vibration tests and -40 ~ 85°C (-40 ~ 185°F) wide operating temp. range, Our certified SODIMM DDR3 is fully suitable for enterprise, embedded, and ultra-thin mobile device like micro-server, notebook applications.
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AQD-SD31GN13-SX
1G SO-DDR3-1333 128X8 1.5V SAM(G)
  1. DDR3-1333 SO-DIMM
  2. 204-Pin
  3. 128MX8
  4. 1G Memory Card
  5. Samsung Chip

US$39

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AQD-SD3L2GN16-SQ
2G SO-DDR3-1600 256X8 1.35V SAM(G)
  1. DDR3-1600 SO-DIMM
  2. 204-Pin
  3. 256MX8
  4. 2G Memory Card
  5. Samsung Chip

US$46

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AQD-SD3L2GN16-SQ1
MEMORY MODULE, 2G SO-DDR3-1600 256X8 1.35V&1.5V SAM
  1. DDR3 1600Mhz Unbuffered SO-DIMM
  2. 30μ" gold plating thickness
  3. 1.35V power consumption
  4. Samsung original chip

US$42

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AQD-SD3L4GE16-SG
4G ECC SO-DDR3-1600 512X8 1.35V SAM
  1. DDR3-1600 ECC SO-DIMM
  2. 204-Pin
  3. 512MX8
  4. 4G Memory Card
  5. Samsung Chip

US$62

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AQD-SD3L4GN16-HG
4G SO-DDR3-1600 512X8 1.35V HYX
  1. DDR3-1600 SO-DIMM
  2. 204-Pin
  3. 512MX8
  4. 4G Memory Card
  5. Hynix Chip

US$57

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AQD-SD3L4GN16-MG
4G SO-DDR3-1600 512X8 1.35V MIC
  1. DDR3-1600 SO-DIMM
  2. 204-Pin
  3. 512MX8
  4. 4G Memory Card
  5. Micron Chip

US$56

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AQD-SD3L4GN16-SG
4G SO-DDR3-1600 512X8 1.35V 1.5V SAM(G)
  1. DDR3-1600 SO-DIMM
  2. 204-Pin
  3. 512MX8
  4. 4G Memory Card
  5. Samsung Chip

US$60

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AQD-SD3L4GN16-SG1
MEMORY MODULE, 4G SO-DDR3-1600 512X8 1.35V&1.5V SAM
  1. DDR3 1600Mhz Unbuffered SO-DIMM
  2. 30μ" gold plating thickness
  3. 1.35V power consumption
  4. Samsung original chip

US$55

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AQD-SD3L4GN16-SQ
4G SO-DDR3-1600 256X8 1.35V 1.5V SAM
  1. DDR3-1600 SO-DIMM
  2. 204-Pin
  3. 256MX8
  4. 4G Memory Card
  5. Samsung Chip

US$69

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